Transparency Market Research delivers key insights on the global GaN substrate market. In terms of revenue, the global GaN substrate market is estimated to expand at a CAGR of ~10% during the forecast period, owing to numerous factors, regarding which, TMR offers thorough insights in its report on the global GaN substrate market.

Gallium nitride (GaN) is a type of wide-bandgap (WBG) semiconductor, with high potential to boost the semiconductor industry, which is predominantly silicon-based. GaN substrate promises to dramatically enhance the performance, efficiency, and ubiquity of sophisticated power management and control functions. If low-cost bulk GaN substrate is not available, GaN can be grown on various other substrates such as sapphire, silicon carbide (SiC), or silicon (Si). For better cost economics, GaN devices are fabricated on large-diameter silicon substrates in the existing silicon CMOS (complementary of the commodore semiconductor group or metal oxide semiconductor) fabs. GaN devices are gaining popularity owing to the various advantages that they offer. These include high breakdown strength, high switching speed, high thermal conductivity, and low on-resistance. This factor is expected to have a positive impact on the global gallium nitride substrate market during the forecast period.

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GaN substrates have evolved significantly since their introduction in the last few years ago. The growing use of GaN technology devices for high-frequency, high-voltage, and high-temperature applications is expected to drive the global GaN substrate market during the forecast period.

The global GaN substrate market is witnessing significant advancements and innovations. Due to this, the market is expected to expand at a significant rate during the forecast period. Increasing adoption of white-light LEDs is another factor boosting the global GaN substrate market. GaN substrates are increasingly being used to make innovative white-light LEDs, in addition to power devices, that exceed the performance of current devices, as they offer improved electric characteristics. Furthermore, rapid advancements in GaN technology have led to the development of efficient GaN substrates with low defect density and free macro defect density. Hence, they can be increasingly used for realizing white-light LEDs. Thus, the increasing adoption of white-light LEDs is anticipated to propel the growth of the global gallium nitride substrate market during the forecast period.