Silicon Carbide semiconductors are compound semiconductors developed by the composition of carbon and silicon. Silicon Carbide offers numerous advantages over silicon, which include enabling a wider range of p- and n-type control required for device construction, 3x the band gap, and 10x the breakdown electric field strength. These advance characteristics of silicon carbide arouse increased usage of silicon carbide semiconductors, such as in high-frequency radar systems, satellite ... Read more

Silicon Carbide semiconductors are compound semiconductors developed by the composition of carbon and silicon. Silicon Carbide offers numerous advantages over silicon, which include enabling a wider range of p- and n-type control required for device construction, 3x the band gap, and 10x the breakdown electric field strength. These advance characteristics of silicon carbide arouse increased usage of silicon carbide semiconductors, such as in high-frequency radar systems, satellite ... Read more