Gallium Nitride (GaN) is a wide band gap semiconductor, emerging as a new technology compared to other semiconductor devices, such as gallium arsenide (GaAS) and silicon carbide (SiC). GaN is expected to be the next generation semiconductor for power applications as it offers an advantage with regards to thermal performance, efficiency, weight and size. GaN semiconductor devices have huge applicability in automotive, ICT, military, defence, aerospace, and power distribution systems among ... Read more
Gallium nitride (GaN) is a crystalline material, used in the production of semiconductors, radio frequency (RF) components, and light emitting devices (LEDs). It exhibits various properties such as high thermal and heat capacity. They have a considerable stability in radiation environment, which benefits the space and military applications. Moreover, GaN transistors offer favorable characteristics ... Read more