Blossoming economy in developing countries and the development of next-gen hybrid electric vehicles and electric vehicles hold immense opportunities for the development of the GaN industrial devices market. However, high cost of pure gallium nitride is anticipated to restrict its growth in the coming years.

Based on type, the GaN industrial devices market is bifurcated into opto electronics and power devices. Opto electronics comprises laser diodes and light-emitting diodes and this segment held a 78.0% share in the overall market in 2014. Power devices are further broken down into metal oxide semiconductor field effect transistor (MOSFETs), Schottky diode, high electron mobility transistors (HEMTs), and others.

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The key applications of GaN HEMTs are wireless phone infrastructure: base stations, V-SAT, defense, WiMAX/LTE, CATV, satellite, and others. Fueled by the increasing number of base transceiver station installations, base stations held the largest share of 26.0% in the overall market in 2014.

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Based on geography, the global GaN industrial devices market is divided into five key regions: Europe, Asia Pacific, North America, Latin America, and the Middle East and Africa. Accounting for a share of 31.10% in the overall GaN industrial devices market in 2014, North America emerged as the leader driven by high penetration of GaN-based transistors in military and defense applications and the growing demand for LEDs in computers, tablets, laptops, gaming devices, and televisions. Europe was a close second with a market share of 28.90% in 2014.